Temperature Dependence of Piezoelectric Properties of Sputtered Aluminum Nitride on Silicon Substrate

IEEJ Transactions on Sensors and Micromachines - Japan
doi 10.1541/ieejsmas.126.158
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Related search

Temperature and Substrate Dependence of Piezoelectric Sensitivity for PVDF Films

Ferroelectrics
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2015English

Piezoelectric Aluminum Nitride Nanoelectromechanical Actuators

Applied Physics Letters
AstronomyPhysics
2009English

Elevated-Temperature Mechanical Properties of Silicon Nitride/Boron Nitride Fibrous Monolithic Ceramics

Journal of the American Ceramic Society
CompositesMaterials ChemistryCeramics
2004English

Nanoscaled Piezoelectric Aluminum Nitride Contour-Mode Resonant Sensors

2010English

High Temperature Mechanical Properties of Partially Sinter-Forged Porous Anisotropic Silicon Nitride

Journal of the Ceramic Society of Japan
Materials ChemistryChemistryCondensed Matter PhysicsCompositesCeramics
2003English

Porosity Dependence of Elastic Constants in Aluminum Nitride Ceramics

Materials Research
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2007English

Effect of Annealing Temperature on Optical and Electrical Properties of Metallophthalocyanine Thin Films Deposited on Silicon Substrate

Materials Science-Poland
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2016English

Low-Temperature Chemical-Vapor-Deposition of Silicon Nitride

Le Journal de Physique IV
1991English

A Low-Noise Silicon Nitride Nanopore Device on a Polymer Substrate

PLoS ONE
Multidisciplinary
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy