High Density GaN/AlN Quantum Dots for Deep UV LED With High Quantum Efficiency and Temperature Stability

Scientific Reports - United Kingdom
doi 10.1038/srep05166
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Science and Business Media LLC

Related search

Strong Electric Field and Nonuniformity Effects in GaN∕AlN Quantum Dots Revealed by High Pressure Studies

Applied Physics Letters
AstronomyPhysics
2006English

Pyrophosphate Phosphor Solid Solution With High Quantum Efficiency and Thermal Stability for Efficient LED Lighting

iScience
Multidisciplinary
2020English

Deep Ultraviolet Emitting AlGaN Quantum Wells With High Internal Quantum Efficiency

Applied Physics Letters
AstronomyPhysics
2009English

Polar Interface Vibrations in GaN/AlN Quantum Dots: Essential Effects of Crystal Anisotropy

Physical Review B
2002English

High–temperature Droplet Epitaxy of Symmetric GaAs/AlGaAs Quantum Dots

Scientific Reports
Multidisciplinary
2020English

High Efficiency InGaN/GaN Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wells

Applied Physics Letters
AstronomyPhysics
2014English

Extremely High Internal Quantum Efficiencies From AlGaN/AlN Quantum Wells Emitting in the Deep Ultraviolet Spectral Region

Applied Physics Letters
AstronomyPhysics
2011English

Self-Assembled GaN Quantum Wires on GaN/AlN Nanowire Templates

Nanoscale
Materials ScienceNanotechnologyNanoscience
2012English

Ultrafast Nonlinear Optical Response in GaN/AlN Quantum Dots for Optical Switching Applications at 1.55 Μm

2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy