Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method
Applied Physics Letters - United States
doi 10.1063/1.4795717
Full Text
Open PDFAbstract
Available in full text
Date
March 11, 2013
Authors
Publisher
AIP Publishing