Intrinsic Carrier Mobility of Multi-Layered MoS2 Field-Effect Transistors on SiO2

Applied Physics Letters - United States
doi 10.1063/1.4799172
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Carrier Mobility in Field-Effect Transistors

2017English

Transferred Large Area Single Crystal MoS2 Field Effect Transistors

Applied Physics Letters
AstronomyPhysics
2015English

Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2017English

Hall and Field-Effect Mobilities in Few Layered P-WSe2 Field-Effect Transistors

Scientific Reports
Multidisciplinary
2015English

Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors

2014English

Electrical and Geometrical Tuning of MoS2 Field Effect Transistors via Direct Nanopatterning

Nanoscale
Materials ScienceNanotechnologyNanoscience
2019English

Solution-Processed C60 Field-Effect Transistors With High Mobility

2011English

Intrinsic Carrier Mobility of Cesium Lead Halide Perovskites

Physical Review Applied
AstronomyPhysics
2018English

Organic Field-Effect Transistors Using Hetero-Layered Structure With OLED Materials

2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy