Berichtigung: Gate-Voltage Control of Borophene Structure Formation

Angewandte Chemie
doi 10.1002/ange.201801117
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Wiley

Related search

Corrigendum: Gate-Voltage Control of Borophene Structure Formation

Angewandte Chemie - International Edition
CatalysisChemistry
2018English

Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy

2000English

Berichtigung: Hybrid Indicators for Fast and Sensitive Voltage Imaging

Angewandte Chemie
2019English

Borophene: Freestanding Borophene and Its Hybrids (Adv. Mater. 27/2019)

Advanced Materials
Mechanics of MaterialsMaterials ScienceNanotechnologyMechanical EngineeringNanoscience
2019English

Dual-Gate Low-Voltage Transparent Electric-Double-Layer Thin-Film Transistors With a Top Gate for Threshold Voltage Modulation

RSC Advances
ChemistryChemical Engineering
2020English

Ultra Low-Voltage Floating-Gate Transconductance Amplifier

English

Impact of Gate-Length Biasing on Threshold-Voltage Selection

English

The Structure and Hardness of the Highest Boride of Tungsten, a Borophene-Based Compound

Scientific Reports
Multidisciplinary
2017English

Being Flexible: The Voltage-Controllable Activation Gate of Kv Channels

Frontiers in Pharmacology
Pharmacology
2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy