Amanote Research

Amanote Research

    RegisterSign In

Electron Beam Interactions With Gallium Arsenide Field Effect Transistors

doi 10.22215/etd/1980-00506
Full Text
Open PDF
Abstract

Available in full text

Date

Unknown

Authors
Raymond Haythornthwaite
Publisher

Carleton University


Related search

A Hybrid Thin-Film Logic Circuit Using Gallium Arsenide Field Effect Transistors

ElectroComponent Science and Technology
1978English

Gallium Arsenide Photocathode for the Free Electron Laser

1985English

Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2004English

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2018English

Field Effect Transistors

2013English

Field Effect Transistors

2016English

The Reaction of Carbon Tetrachloride With Gallium Arsenide (001)

Applied Physics Letters
AstronomyPhysics
1998English

Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2018English

Photoelectric Effect Accelerated Electrochemical Corrosion and Nanoimprint Processes on Gallium Arsenide Wafer

Chemical Science
Chemistry
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy