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Annealing Effect on Tunneling Magnetoresistance in MgO-based Magnetic Tunnel Junctions With FeMn Exchange-Bias Layer
Journal of Magnetism and Magnetic Materials
- Netherlands
doi 10.1016/j.jmmm.2009.08.038
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Categories
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Date
January 1, 2010
Authors
Q.L. Ma
J.F. Feng
Gen Feng
K. Oguz
X.F. Han
J.M.D. Coey
Publisher
Elsevier BV
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