Amanote Research
Register
Sign In
Annealing Effect on Tunneling Magnetoresistance in MgO-based Magnetic Tunnel Junctions With FeMn Exchange-Bias Layer
Journal of Magnetism and Magnetic Materials
- Netherlands
doi 10.1016/j.jmmm.2009.08.038
Full Text
Open PDF
Abstract
Available in
full text
Categories
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Date
January 1, 2010
Authors
Q.L. Ma
J.F. Feng
Gen Feng
K. Oguz
X.F. Han
J.M.D. Coey
Publisher
Elsevier BV