Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications
Nanoscale Research Letters - Germany
doi 10.1186/s11671-015-0846-y
Full Text
Open PDFAbstract
Available in full text
Date
March 19, 2015
Authors
Publisher
Springer Science and Business Media LLC