On the Site Occupancy of Dopants in 4h-SiC

Microscopy and Microanalysis - United Kingdom
doi 10.1017/s1431927603013163
Full Text
Abstract

Available in full text

Categories
Instrumentation
Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Suppression of Rotational Twins in Epitaxial B12P2 on 4h-SiC

English

Channel Width Effect on the Operation of 4h-SiC Vertical JFETs

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2016English

Charge State Switching of the Divacancy Defect in 4H -SiC

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2012English

Total Dose Effects on 4h-SiC Bipolar Junction Transistors

Materials Science Forum
2017English

Neutron Radiation Effect on 4h-SiC MESFETs and SBDs

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2010English

Graphene Epitaxially Grown on Vicinal 4h-SiC(0001) Substrates

e-Journal of Surface Science and Nanotechnology
SurfacesMechanics of MaterialsCondensed Matter PhysicsInterfacesNanoscienceBioengineeringFilmsBiotechnologyCoatingsNanotechnology
2009English

Incipient Plasticity in 4h-SiC During Quasistatic Nanoindentation

Journal of the Mechanical Behavior of Biomedical Materials
Mechanics of MaterialsBiomedical EngineeringBiomaterials
2014English

Effect of High-Energy Protons on 4h-SiC Radiation Detectors

Lithuanian Journal of Physics
AstronomyPhysics
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy