Structural and Electrical Properties of Silicon Dioxide Layers With Embedded Germanium Nanocrystals Grown by Molecular Beam Epitaxy

Applied Physics Letters - United States
doi 10.1063/1.1555709
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
2019English

Properties of Silicon Dioxide Layers With Embedded Metal Nanocrystals Produced by Oxidation of Si:Me Mixture

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2011English

Strong Localization in InGaN Layers With High in Content Grown by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2002English

Magnetic Properties of Ultrathin Magnetite Films Grown by Molecular Beam Epitaxy

IEEE Transactions on Magnetics
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2008English

Structural Properties of Bi2Te3 and Bi2Se3 Topological Insulators Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Applied Physics Letters
AstronomyPhysics
2011English

Effects of Hydrogen on the Morphology and Electrical Properties of GaN Grown by Plasma-Assisted Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2005English

Structural, Optical and Electronic Properties of Homoepitaxial GaN Nanowalls Grown on GaN Template by Laser Molecular Beam Epitaxy

RSC Advances
ChemistryChemical Engineering
2015English

Characterization of SnTe Films Grown by Molecular Beam Epitaxy

Brazilian Journal of Physics
AstronomyPhysics
2006English

Formation of Large-Grain-Sized BaSi2 Epitaxial Layers Grown on Si(111) by Molecular Beam Epitaxy

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy