Amanote Research

Amanote Research

    RegisterSign In

Cathodoluminescence Studies of Electron Injection Effects in Wide-Band-Gap Semiconductors

doi 10.5772/33655
Full Text
Open PDF
Abstract

Available in full text

Date

March 28, 2012

Authors
Casey SchwarzLeonid ChernyakElena Flitsiy
Publisher

InTech


Related search

Wide-Band-Gap Semiconductors

1993English

Wide Band Gap Ferromagnetic Semiconductors and Oxides

Journal of Applied Physics
AstronomyPhysics
2003English

Cathodoluminescence Studies of Dislocations in Semiconductors

Le Journal de Physique Colloques
1983English

Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors

2018English

Behavior of Hydrogen in Wide Band Gap Oxides

Journal of Applied Physics
AstronomyPhysics
2007English

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors. Acta Physica Polonica a 136, 916 (2019), ERRATUM

Acta Physica Polonica A
AstronomyPhysics
2020English

A 380 v High Efficiency and High Power Density Switched-Capacitor Power Converter Using Wide Band Gap Semiconductors

Renewable Energy and Power Quality Journal
Electronic EngineeringEnergy EngineeringRenewable EnergySustainabilityElectricalPower Technologythe Environment
2018English

Electron Microscopy Studies of Non-Local Effects’ Impact on Cathodoluminescence of Semiconductor Laser Structures

Materials Transactions
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2011English

Trap Level Measurements in Wide Band Gap Materials by Thermoluminescence

2016English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy