Periodic Cycle Number Modulating Effect on Crystallization Temperature in Superlattice-Like [Ge/Ge8Sb92]n Phase-Change Films and Exploration of Mechanism

AIP Advances - United States
doi 10.1063/1.4986879
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

Crystal Growth and Design
Materials ScienceChemistryCondensed Matter Physics
2012English

Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application

2012English

Mechanism of Crystallization in Sb2Se3 Amorphous Films

Scientific Herald of Uzhhorod University.Series Physics
2013English

Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

2011English

Thermal Transport in SiGe Superlattice Thin Films and Nanowires: Effects of Specimen and Periodic Lengths

Physical Review B
2013English

Solid-Phase Crystallization of Amorphous Silicon Films

2015English

Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon–Germanium Films

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2009English

In-Plane Thermoelectric Properties of Si/Ge Superlattice

English

Change in the Resistivity of Ge-Doped Sb Phase Change Thin Films Grown by Chemical Vapor Deposition According to Their Microstructures

Applied Physics Letters
AstronomyPhysics
2009English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy