Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

Materials - Switzerland
doi 10.3390/ma8115403
Full Text
Abstract

Available in full text

Date
Authors
Publisher

MDPI AG

Related search

INTERNAL PHOTOEMISSION SPECTROSCOPY FOR a PtSi/p-Si SCHOTTKY JUNCTION

2000English

Improved Annealing Process for 6h-SiC P+-N Junction Creation by Al Implantation

Materials Science Forum
2000English

Junction Investigation of Graphene/Silicon Schottky Diodes

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2012English

Research on Microwave Junction Gate Field Effect Transistors.

1979English

P-Type SiGe/Si Superlattice Cooler

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2000English

Fullerene-Based Schottky-Junction Organic Solar Cells: A Brief Review

Journal of Photonics for Energy
Renewable EnergyMolecular Physics,SustainabilityAtomicOpticsthe Environment
2014English

Design, Fabrication, and Analysis of P-Channel Arsenide/Antimonide Hetero-Junction Tunnel Transistors

Journal of Applied Physics
AstronomyPhysics
2014English

Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation

2001English

A SiGe 8-Channel Comparator for Application in a Synthetic Aperture Radiometer

2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy