Experimental Identification of the Doping Deactivation Mechanism in Semiconductors: Application to Nitrogen inZnS0.06Se0.94

Physical Review B
doi 10.1103/physrevb.59.r12736
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Identification of Vacancy Defects in Compound Semiconductors by Core-Electron Annihilation: Application to InP

Physical Review B
1995English

Speedup of Doping Fronts in Organic Semiconductors Through Plasma Instability

Physical Review Letters
AstronomyPhysics
2011English

Nitrogen Doping of Pyrolytic Graphite

TANSO
1966English

Nitrogen-Doping Induces Tunfable Magnetism in ReS2

npj 2D Materials and Applications
Mechanics of MaterialsMaterials ScienceChemistryCondensed Matter PhysicsMechanical Engineering
2018English

Molecular Monolayers for Doping Silicon : From Doping Dose Control to Device Application

English

Single Molecule Imaging Reveals the Mechanism Ofactin.Tn.Tm Activation and Deactivation

Biophysical Journal
Biophysics
2017English

Boron and Nitrogen Doping in Graphene Antidot Lattices

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Experimental Determination of the Kinetics of Lb to laA Nitrogen Aggregation With Application to Natural Ib-laA Diamonds

English

Doping Mechanism in Nanocrystals Is Now Understood

oemagazine
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy