Amanote Research
Register
Sign In
Tunable Polarity Behavior and High-Performance Photosensitive Characteristics in Schottky-Barrier Field-Effect Transistors Based on Multilayer WS2
doi 10.1021/acsami.7b18370.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Direct Probing of Schottky Barriers in Si Nanowire Schottky Barrier Field Effect Transistors
Physical Review Letters
Astronomy
Physics
Interfacial Gate Resistance in Schottky-Barrier-Gate Field-Effect Transistors
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Schottky Barrier Contrasts in Single and Bi-Layer Graphene Contacts for MoS2 Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Low-Voltage High-Performance Flexible Organic Field-Effect Transistors Based on Ultrathin Single-Crystal Microribbons
Gate-Field-Induced Schottky Barrier Lowering in a Nanotube Field-Effect Transistor
AIP Conference Proceedings
Astronomy
Physics
Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors
Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors
Nano-Micro Letters
Surfaces
Electronic Engineering
Nanoscience
Optical
Electrical
Magnetic Materials
Films
Nanotechnology
Electronic
Coatings
Durable Chemical Sensors Based on Field-Effect Transistors
Sensors and Actuators, B: Chemical
Surfaces
Electronic Engineering
Alloys
Condensed Matter Physics
Instrumentation
Materials Chemistry
Metals
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic