Strong Excitation Intensity Dependence of the Photoluminescence Line Shape in GaAs1−xBix Single Quantum Well Samples

Journal of Applied Physics - United States
doi 10.1063/1.4801429
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Excitation Intensity Dependence of Photoluminescence Blinking in CsPbBr3 Perovskite Nanocrystals

English

Controlled Suppression of the Photoluminescence Superlinear Dependence on Excitation Density in Quantum Dots

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2012English

Photoluminescence Characterization of Single Heterojunction Quantum Well Structures

Applied Physics Letters
AstronomyPhysics
1987English

Influence of Bi on Dielectric Properties of GaAs1–xBix Alloys

Materials Science-Poland
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2019English

Quasi-Fermi-Levels in Quantum-Well Photoluminescence

Physical Review B
1991English

Superlinear Increase of Photoluminescence With Excitation Intensity in Zn-Doped GaN

Physical Review B
2013English

Recombination Mechanisms and Band Alignment of GaAs1−xBix/GaAs Light Emitting Diodes

Applied Physics Letters
AstronomyPhysics
2012English

Optical Excitation and External Photoluminescence Quantum Efficiency of Eu3+ in GaN

Scientific Reports
Multidisciplinary
2014English

Unexpected Bismuth Concentration Profiles in MOVPE GaAs1-xBix Films Revealed by HAADF STEM Imaging

Microscopy and Microanalysis
Instrumentation
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy