Amanote Research
Register
Sign In
An Analytic Saturation Model for Drain and Substrate Currents of Conventional and LDD MOSFETs
IEEE Transactions on Electron Devices
- United States
doi 10.1109/16.55754
Full Text
Open PDF
Abstract
Available in
full text
Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
July 1, 1990
Authors
Unknown
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
