Amanote Research
Register
Sign In
10 Gbit/S Monolithic Integrated MSM-Photodiode AlGaAs/GaAs-Hemt Optoelectronic Receiver
doi 10.1109/drc.1991.664713
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
V. Hurm
J. Rosenzweig
M. Ludwig
W. Benz
R. Osorio
M. Berroth
A. Hulsmann
G. Kaufel
K. Kohler
B. Raynor
J. Schneider
Publisher
IEEE
Related search
High Sensitivity InP-based Monolithically Integrated Pin-Hemt Receiver-OEIC's for 10 Gb/S
IEEE Transactions on Microwave Theory and Techniques
Electronic Engineering
Radiation
Electrical
Condensed Matter Physics
10 Gbit/S Asynchronous Digital Optical Regenerator
High-Performance GaAs/AlGaAs Optical Phase Modulators for Microwave Photonic Integrated Circuits
160Gb/S Serial Line Rates in a Monolithic Optoelectronic Multistage Interconnection Network
A 12 GHz Oscillator Based on a GaAs HEMT Integrated to a HTS Resonator
Le Journal de Physique IV
Development of a GaAs-based Monolithic Surface Acoustic Wave Integrated Chemical Microsensor
Optoelectronic Switching With GaAs Photoconductors.
Monolithic Integration of GaN HEMT With Silicon MOS Technology
All-Optical Regenerative OTDM Add/Drop Multiplexing at 40 Gbit/S Using Monolithic InP Mach-Zehnder Interferometer
