Catalyst-Free Growth of GaAs Nanowires by Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Letters - United States
doi 10.1063/1.1935038
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2010English

Catalyst-Free Growth of High-Optical Quality GaN Nanowires by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Enhanced Sb Incorporation in InAsSb Nanowires Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Te Doping of GaAs Using Metalorganic Vapor Phase Epitaxy: Volatile Versus Nonvolatile Behavior

Journal of Applied Physics
AstronomyPhysics
2008English

Carbon Doping of InAlAs Layers Grown by Metalorganic Vapor Phase Epitaxy

Brazilian Journal of Physics
AstronomyPhysics
2002English

Growth Direction Control and Magnetic Characterizations of MnAs Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy

2008English

Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
1992English

Effect of Graded-Temperature Arsenic Prelayer on Quality of GaAs on Ge/Si Substrates by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

MRS Internet Journal of Nitride Semiconductor Research
1997English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy