Photoluminescence Properties of Erbium Doped InGaN Epilayers

Applied Physics Letters - United States
doi 10.1063/1.3193532
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

The Photoluminescence of Erbium-Doped Silicon Monoxide

Optical Materials
Organic ChemistryElectronic EngineeringSpectroscopyTheoretical ChemistryElectronicMolecular Physics,Inorganic ChemistryOpticalElectricalComputer ScienceMagnetic MaterialsPhysicalOpticsAtomic
1996English

Thermoluminescence and Photoluminescence Study of Erbium Doped CaY2O4Phosphor

Indian Journal of Materials Science
2015English

Optical Properties of Erbium Doped Borotellurite Glass System

Advanced Materials Research
2015English

Intense Photoluminescence From Erbium-Doped Tantalum Oxide Thin Films Deposited by Sputtering

IEICE Electronics Express
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2009English

Enhancement of Photoluminescence Intensity of Erbium Doped Silica Containing Ge Nanocrystals: Distance Dependent Interactions

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2015English

Thermal and Photoluminescence Properties of Nd3+ Doped Tellurite Nanoglass

Nano Hybrids
2013English

Photoluminescence Properties of in Situ Tm-Doped AlxGa1−xN

Applied Physics Letters
AstronomyPhysics
2003English

Development of Indium-Rich InGaN Epilayers for Integrated Tandem Solar Cells

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2013English

Photoluminescence Quantum Efficiency of Er Optical Centers in GaN Epilayers

Scientific Reports
Multidisciplinary
2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy