the Effects of Electron Irradiation and Thermal Dependence Measurements on 4h-Sic Schottky Diode

Журнал технической физики
doi 10.21883/ftp.2017.12.45193.8646
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Ioffe Institute Russian Academy of Sciences

Related search

Dose Rate Linearity in 4h-SiC Schottky Diode-Based Detectors at Elevated Temperatures

IEEE Transactions on Nuclear Science
Electronic EngineeringNuclearNuclear EnergyHigh Energy PhysicsEngineeringElectrical
2017English

Characteristics of SiC Pillar-Shaped Nanostructure Schottky Diode

Journal of Applied Physics
AstronomyPhysics
2009English

Thermal Properties of AlGaN/GaN High Electron Mobility Transistors on 4H and 6H SiC Substrates

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2014English

Dependence of Spontaneous Polarization on Stacking Sequence in SiC Revealed by Local Schottky Barrier Height Variations Over a Partially Formed 8h-SiC Layer on a 4h-SiC Substrate

Applied Physics Letters
AstronomyPhysics
2011English

Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Crystals
Materials ScienceInorganic ChemistryChemical EngineeringCondensed Matter Physics
2019English

Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range

Materials Science Forum
2016English

Total Dose Effects on 4h-SiC Bipolar Junction Transistors

Materials Science Forum
2017English

Characterization of Schottky Diodes on 4h-SiC With Various Off-Axis Angles Grown by Sublimation Epitaxy

Materials Science Forum
2008English

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4h-SiC

Materials Science Forum
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy