Synchrotron Radiation Photoemission Study of Metal Overlayers on Hydrogenated Amorphous Silicon at Room Temperature

doi 10.31274/rtd-180813-12786
Full Text
Abstract

Available in full text

Date

Unknown

Authors
Publisher

Iowa State University

Related search

Current Transport Properties of Metal/Hydrogenated Amorphous Silicon/GaSb Structures

Applied Physics Letters
AstronomyPhysics
1995English

Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide

Nanomaterials
Materials ScienceChemical Engineering
2019English

Photoemission Studies of Chiral Metal Surfaces Using Circularly Polarized Synchrotron Radiation

Physical Review B
2001English

Optical Properties of Hydrogenated Amorphous Silicon

Journal of Applied Physics
AstronomyPhysics
1986English

Temperature Dependence of the Surface Roughness Evolution During Hydrogenated Amorphous Silicon Film Growth

Applied Physics Letters
AstronomyPhysics
2003English

Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon at Atmospheric Pressure

Plasma Sources Science and Technology
Condensed Matter Physics
2003English

Molecular Dynamics Simulation of Hydrogenated Amorphous Silicon Formation

IEEJ Transactions on Fundamentals and Materials
Electronic EngineeringElectrical
1994English

Metal Assisted Synthesis of Single Crystalline Silicon Nanowires at Room Temperature for Photovoltaic Application

Journal of Nanomedicine & Nanotechnology
2014English

Reaction Between Hydrogenated Amorphous Silicon and Aluminum Film

Transactions of the Japan Institute of Metals
1984English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy