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Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4h-SiC Interface
Acta Physica Polonica A
- Poland
doi 10.12693/aphyspola.125.1033
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Categories
Astronomy
Physics
Date
April 1, 2014
Authors
K. Król
M. Sochacki
J. Szmidt
Publisher
Institute of Physics, Polish Academy of Sciences
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