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Threshold Voltage Shift in Hetero-Nanocystal Floating Gate Flash Memory

Materials Research Society Symposium - Proceedings - United States
doi 10.1557/proc-832-f3.4
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Abstract

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Categories
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
Date

January 1, 2004

Authors
Yan ZhuDengtao ZhaoRuigang LiJianlin Liu
Publisher

Cambridge University Press (CUP)


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