Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy

Journal of Applied Physics - United States
doi 10.1063/1.351776
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Carbon Doping of InAlAs Layers Grown by Metalorganic Vapor Phase Epitaxy

Brazilian Journal of Physics
AstronomyPhysics
2002English

1.24 Μm InGaAs/GaAs Quantum Dot Laser Grown by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

Applied Physics Letters
AstronomyPhysics
2004English

Electron and Hole Traps in N-Doped ZnO Grown on P-Type Si by Metalorganic Chemical Vapor Deposition

Journal of Applied Physics
AstronomyPhysics
2007English

Effect of Strain-Compensation in Stacked 1.3μm InAs∕GaAs Quantum Dot Active Regions Grown by Metalorganic Chemical Vapor Deposition

Applied Physics Letters
AstronomyPhysics
2004English

GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

MRS Internet Journal of Nitride Semiconductor Research
1997English

Catalyst-Free Growth of GaAs Nanowires by Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2005English

Enhanced Sb Incorporation in InAsSb Nanowires Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Plasma-Etching-Enhanced Deep Centers in N-GaN Grown by Metalorganic Chemical-Vapor Deposition

Applied Physics Letters
AstronomyPhysics
2003English

High Optical Quality Polycrystalline Indium Phosphide Grown on Metal Substrates by Metalorganic Chemical Vapor Deposition

Journal of Applied Physics
AstronomyPhysics
2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy