Metal-Gate/High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition

doi 10.7567/ssdm.2009.g-8-3
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Alternative Surface Passivation on Germanium for Metal-Oxide-Semiconductor Applications With High-K Gate Dielectric

Applied Physics Letters
AstronomyPhysics
2004English

Wafer-Scale and Selective-Area Growth of High-Quality Hexagonal Boron Nitride on Ni(111) by Metal-Organic Chemical Vapor Deposition

Scientific Reports
Multidisciplinary
2019English

Aluminum Oxide as Passivation and Gate Insulator in GaAs-based Field-Effect Transistors Prepared in Situ by Metal-Organic Vapor Deposition

Applied Physics Letters
AstronomyPhysics
2012English

Free Excitonic Transitions in GaN, Grown by Metal‐organic Chemical‐vapor Deposition

Journal of Applied Physics
AstronomyPhysics
1996English

Effects of Growth Temperature on InN∕GaN Nanodots Grown by Metal Organic Chemical Vapor Deposition

Journal of Applied Physics
AstronomyPhysics
2008English

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

English

1.16 Μm InAs/GaAs Quantum Dot Laser Grown by Metal Organic Chemical Vapor Deposition

Acta Physica Polonica A
AstronomyPhysics
2018English

Intrinsic P-Type ZnO Films Fabricated by Atmospheric Pressure Metal Organic Chemical Vapor Deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
2010English

Deep-Level Emissions in GaAsN∕GaAs Structures Grown by Metal Organic Chemical Vapor Deposition

Journal of Applied Physics
AstronomyPhysics
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy