High-Response I-InAs/N-GaAs Quantum-Dot Infrared Photodetector With No Current Blocking Barrier

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.1143/jjap.43.1218
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Japan Society of Applied Physics

Related search

In0.6Ga0.4As/GaAs Quantum-Dot Infrared Photodetector With Operating Temperature Up to 260 K

Applied Physics Letters
AstronomyPhysics
2003English

High-Power Passively Mode-Locked Tapered InAs/GaAs Quantum-Dot Lasers

Applied Physics B: Lasers and Optics
AstronomyPhysics
2010English

Broadly Tunable High-Power InAs/GaAs Quantum-Dot External Cavity Diode Lasers

Optics Express
OpticsAtomicMolecular Physics,
2010English

Type-Ii InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

IEEE Journal of Photovoltaics
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2018English

Temperature-Dependent Modulated Reflectance and Photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs Quantum Dot Heterostructures

Optical and Quantum Electronics
Electronic EngineeringElectronicMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsOptics
2016English

InAs/GaAs Quantum-Dot Intermixing: Comparison of Various Dielectric Encapsulants

Optical Engineering
EngineeringOpticsAtomicMolecular Physics,
2015English

1.55 Μm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-Locked Laser

Scientific Reports
Multidisciplinary
2012English

Type-Ii InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

Acta Physica Polonica A
AstronomyPhysics
2016English

Plasmonic Enhanced Quantum Well Infrared Photodetector With High Detectivity

Applied Physics Letters
AstronomyPhysics
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy