Use of WNx as Diffusion Barrier for Copper Airbridged Low Noise GaAs PHEMT

Electronics Letters - United Kingdom
doi 10.1049/el:20031133
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institution of Engineering and Technology (IET)

Related search

Design of Medium Power Amplifier Using GaAs PHEMT Technology for Wireless Applications

2012English

Tantalum as a Diffusion Barrier Between Copper and Silicon: Failure Mechanism and Effect of Nitrogen Additions

Journal of Applied Physics
AstronomyPhysics
1992English

Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements

Acta Physica Polonica A
AstronomyPhysics
2011English

Low Frequency Noise in GaAs Heterodimensional Junction Field Effect Transistors

Electronics Letters
Electronic EngineeringElectrical
2000English

Design and Performance of Microwave Amplifiers With Gaas Fets for Low Noise Front-End Receivers.

English

Low Frequency Noise of a 980 Nm InGaAs/GaAs Strained Quantum Well Laser

Journal de Physique III
1993English

Zirconium Copper — A New Material for Use at Low Temperatures?

AIP Conference Proceedings
AstronomyPhysics
2006English

Pseudomonas Aeruginosa Biofilm as a Diffusion Barrier to Piperacillin.

Antimicrobial Agents and Chemotherapy
Infectious DiseasesPharmacology
1992English

An Improved EEHEMT RF Noise Model for 0.25 Μm InGaP pHEMT Transistor Using Verilog-A Language

IEICE Transactions on Electronics
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy