Amanote Research

Amanote Research

    RegisterSign In

X-Ray Investigation of A(iii)-Bv Semiconductors Implanted With High Doses of IONS

Acta Crystallographica Section A Foundations of Crystallography
doi 10.1107/s0108767302086907
Full Text
Open PDF
Abstract

Available in full text

Date

August 6, 2002

Authors
W. K. WierzchowskiK. WieteskaW. GraeffA. TurosG. GawlikR. Groetzschel
Publisher

International Union of Crystallography (IUCr)


Related search

An X-Ray Diffraction System for Evaluating the Epitaxial Growth of III-V Alloy Semiconductors

1984English

Apparatus for Recording X-Ray Doses.

Proceedings of the Royal Society of Medicine
1923English

Light Emitting Single-Crystalline Silicon Wafers Implanted With v and III Group Ions

Acta Physica Polonica A
AstronomyPhysics
2014English

High-Resolution X-Ray Spectra From Low-Temperature, Highly Charged Ions

1997English

Voids' Layer Structures in Silicon Irradiated With High Doses of High-Energy Helium Ions

Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2015English

X-Ray Photochemistry of Carbon Hydride Molecular Ions

Physical Chemistry Chemical Physics
Theoretical ChemistryAstronomyPhysicsPhysical
2018English

X-Ray Investigation of Stridor in a Child

BMJ
1943English

X-Ray Studies of Microstructures in Semiconductors and Superconducting Materials

1991English

X‐ray Diffraction Fromdspacing Gradients Along Ion‐implanted Zones

Journal of Applied Physics
AstronomyPhysics
1991English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy