Oxygen-Adsorption-Induced Anomalous Capacitance Degradation in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors Under Hot-Carrier Stress
Journal of the Electrochemical Society - United States
doi 10.1149/2.075203jes
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Date
January 1, 2012
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The Electrochemical Society