Amanote Research
Register
Sign In
Effects of Pore on Dielectric Constants of Films Deposited by PECVD
doi 10.7567/ssdm.2010.p-10-4
Full Text
Open PDF
Abstract
Available in
full text
Date
September 23, 2010
Authors
S. Park
K. Kim
C. Gong
N. Lee
Y. Kwon
D. Lee
M. Kim
Publisher
The Japan Society of Applied Physics
Related search
Investigation of Optical Properties of Silicon Oxynitride Films Deposited by RF PECVD Method
Materials Science-Poland
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Corrosion Protection and Mechanical Performance of SiO2 Films Deposited via PECVD on OT59 Brass
Anti-Corrosion Methods and Materials
Materials Science
Chemical Engineering
Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process
ISRN Nanomaterials
Determination of Pore-Size Distribution in Low-Dielectric Thin Films
Applied Physics Letters
Astronomy
Physics
Interface Effect on Dielectric Constant of HfO2∕Al2O3 Nanolaminate Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Applied Physics Letters
Astronomy
Physics
Properties of Silicon Dioxide Film Deposited by PECVD at Low Temperature/Pressure
Metallurgical and Materials Engineering
Alloys
Metals
Mechanical Engineering
Annealing Effects on V2o5-X Thin Films Deposited by Non Reactive Sputtering
Nanosystems: Physics, Chemistry, Mathematics
Effects of Temperature and of Mixing on Dielectric Constants of Several Organic Solvents
Bulletin of the Chemical Society of Japan
Chemistry
Micro-Structure of PECVD Diamond Films by Slow Positron Beam
Chinese Journal of Chemical Physics
Theoretical Chemistry
Physical