(PDF) Dynamic Thermal Characterization and Modeling of

Dynamic Thermal Characterization and Modeling of Silicon Bipolar Junction Transistors Using Pulsed RF Measurement System

doi 10.7567/ssdm.2003.p11-5l

Full Text

Abstract

Available in full text

Date

January 1, 2003

Authors

Publisher

The Japan Society of Applied Physics

Related search

Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors

English

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Annals of West University of Timisoara - Physics

English

Extraction and Modeling of Self-Heating and Mutual Thermal Coupling Impedance of Bipolar Transistors

IEEE Journal of Solid-State Circuits

Electronic Engineering

English

Total Dose Effects on 4h-SiC Bipolar Junction Transistors

Materials Science Forum

English

Modelling and Characterization of Double Diffused Bipolar Transistors.

English

Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar Transistors

English

Measurement of Thermal Conductivity of Powder System by Pulsed Laser

Journal of the Research Association of Powder Technology, Japan

English

40 Ns Pulsed I/v Set-Up and Measurement Method Applied to InP HBT Characterization and Electro-Thermal Modeling

English

RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors

English