Impact of Postdeposition Annealing Upon Film Properties of Atomic Layer Deposition-Grown Al2O3 on GaN
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics - United States
doi 10.1116/1.4904968
Full Text
Open PDFAbstract
Available in full text
Categories
Date
January 1, 2015
Authors
Publisher
American Vacuum Society