Morphological Stability During Solidification of Silicon Incorporating Metallic Impurities

Journal of Applied Physics - United States
doi 10.1063/1.4871809
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Heterogeneous Twinning During Directional Solidification of Multi-Crystalline Silicon

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2019English

Stability of a Eutectic Interface During Directional Solidification

English

Effects of Impurities on Graphite Shape During Solidification of Spheroidal Graphite Cast Ions

Materialia
Materials Science
2019English

Influence of Mechanical Stirring on the Crucible Dissolution Rate and Impurities Distribution in Directional Solidification of Multicrystalline Silicon

Annals of West University of Timisoara - Physics
2015English

Mushy-Zone Rayleigh Number to Describe Macrosegregation and Channel Segregate Formation During Directional Solidification of Metallic Alloys

Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science
Mechanics of MaterialsAlloysCondensed Matter PhysicsMetals
2004English

Effect of Heat Transfer During the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

Metallurgical and Materials Transactions E
2015English

Implementation of Solidification/Stabilization Process to Reduce Hazardous Impurities and Stabilize Soil Matrices

E3S Web of Conferences
EarthEnergyPlanetary SciencesEnvironmental Science
2019English

Magnetic Properties of Substitutional3dtransition Metal Impurities in Silicon Carbide

Physical Review B
2003English

The Silicon Effect in Metallic Silylamides

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy