Novel Implantation Method to Improve Machine-Model Electrostatic Discharge Robustness of Stacked N-Channel Metal-Oxide Semiconductors (NMOS) in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductors (CMOS) Technology

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.1143/jjap.41.l1288
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Japan Society of Applied Physics

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