Aluminum Incorporation Into AlGaN Grown by Low-Pressure Metal Organic Vapor Phase Epitaxy

Journal of Applied Physics - United States
doi 10.1063/1.2199972
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Residual Doping in Homoepitaxial Zinc Oxide Layers Grown by Metal Organic Vapor Phase Epitaxy

Applied Physics Express
EngineeringAstronomyPhysics
2010English

Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2006English

Enhanced Sb Incorporation in InAsSb Nanowires Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Growth Direction Control and Magnetic Characterizations of MnAs Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy

2008English

Growth of GaN Film on 150mm Si (111) Using Multilayer AlN∕AlGaN Buffer by Metal-Organic Vapor Phase Epitaxy Method

Applied Physics Letters
AstronomyPhysics
2007English

Optical Properties of Metastable Shallow Acceptors in Mg-Doped GaN Layers Grown by Metal-Organic Vapor Phase Epitaxy

2010English

GaN/AlN Resonant Tunneling Diode With High Peak-To-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy

2013English

Coupling of InAs/InP Quantum Dots to the Plasmon Resonance of in Nanoparticles Grown by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2013English

Catalyst-Free Growth of High-Optical Quality GaN Nanowires by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy