Alloying Effects in Self-Assembled InAs/InP Dots

Journal of Crystal Growth - Netherlands
doi 10.1016/s0022-0248(99)00020-2
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Elsevier BV

Related search

Self-Assembled InAs/InP Quantum Dots and Quantum Dashes: Material Structures and Devices

Progress in Quantum Electronics
Electronic EngineeringStatisticalNonlinear PhysicsOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2014English

Magnetophotoluminescence of Stacked Self-Assembled InP Quantum Dots

Applied Physics Letters
AstronomyPhysics
1999English

Third-Harmonic Generation in InAs/GaAs Self-Assembled Quantum Dots

Physical Review B
1999English

Study of Self-Assembled InAs Quantum Dots on InP Nano-Templates by Low Voltage Scanning Electron Microscopy Cathodoluminescence

Microscopy and Microanalysis
Instrumentation
2002English

Carrier Escape Dynamics in Multilayered Self-Assembled InAs∕GaAs Quantum Dots

2010English

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

Physical Review Letters
AstronomyPhysics
2000English

Determination of Spin Polarization in InAs∕GaAs Self-Assembled Quantum Dots

Applied Physics Letters
AstronomyPhysics
2008English

Deep Level Transient Spectroscopy Characterization of InAs Self-Assembled Quantum Dots

Journal of Applied Physics
AstronomyPhysics
2001English

Infrared Second-Order Optical Susceptibility in InAs/GaAs Self-Assembled Quantum Dots

Physical Review B
2000English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy