Amanote Research
Register
Sign In
the Integration of InGaP LEDs With CMOS on 200 Mm Silicon Wafers
doi 10.1117/12.2252030
Full Text
Open PDF
Abstract
Available in
full text
Date
February 20, 2017
Authors
Bing Wang
Kwang Hong Lee
Cong Wang
Yue Wang
Riko I. Made
Wardhana Aji Sasangka
Viet Cuong Nguyen
Kenneth Eng Kian Lee
Chuan Seng Tan
Soon Fatt Yoon
Eugene A. Fitzgerald
Jurgen Michel
Publisher
SPIE
Related search
Optical Flatness Metrology for 300 Mm Silicon Wafers
AIP Conference Proceedings
Astronomy
Physics
Effects of Post-Deposition Vacuum Annealing on the Piezoelectric Properties of AlScN Thin Films Sputtered on 200 Mm Production Wafers
Influence of PE-ALD of GaP on the Silicon Wafers Quality
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
White Beam Topography of 300 Mm Si Wafers
Journal of Materials Science: Materials in Electronics
Electronic Engineering
Biomedical Engineering
Condensed Matter Physics
Biomaterials
Electronic
Molecular Physics,
Biophysics
Optical
Electrical
Atomic
Magnetic Materials
Bioengineering
Optics
Monocrystalline Silicon Carbide Wafers Processing
Mordovia University Bulletin
Effect of Ultrasonic Strain on P-Type Silicon Wafers
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Comparison Between Different Ways in Making Silicon Dioxide Layer on Silicon Wafers
MATEC Web of Conferences
Materials Science
Engineering
Chemistry
Surface Grafting of Polypyrrole Onto Silicon Wafers
Chemistry Letters
Chemistry
Mirror Polishing of Silicon Wafers (4th Report)
Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Mechanical Engineering