Amanote Research
Register
Sign In
Broadband AlGaN/GaN HEMT MMIC Attenuators With High Dynamic Range
doi 10.1109/euma.2000.338705
Full Text
Open PDF
Abstract
Available in
full text
Date
October 1, 2000
Authors
Egor Alekseev
Shawn S.H. Hsu
Dimitris Pavlidis
Tadayoshi Tsuchiya
Michio Kihara
Publisher
IEEE
Related search
A MMIC GaN HEMT Voltage-Controlled-Oscillator With High Tuning Linearity and Low Phase Noise
A Planar Distributed Channel AlGaN/GaN HEMT Technology
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
The Characteristics of Fluorinated Gate Dielectric AlGaN/GaN MIS-HEMT
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT
Progress In Electromagnetics Research Letters
Optical
Electronic
Magnetic Materials
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
Broadband GaAs MESFET and GaN HEMT Resistive Feedback Power Amplifiers
IEEE Journal of Solid-State Circuits
Electronic Engineering
Electrical
The Investigation of AlGaN/GaN HEMT Failure Mechanisms Under Different Temperature Conditions
Investigation and Mathematical Modelling for Different Scattering Mechanisms in AlGaN/GaN HEMT
Oxygen Desorption Kinetics of ZnO Nanorod–gated AlGaN/GaN HEMT-based UV Photodetectors
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
