The Research of Low-Noise Gan Hemt of Cryogenic Temperatures

National Association of Scientists
doi 10.31618/nas.2413-5291.2020.3.52.152
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Consulting Group Education and Science LLC

Related search

A MMIC GaN HEMT Voltage-Controlled-Oscillator With High Tuning Linearity and Low Phase Noise

2015English

Generation-Recombination Defects in AlGaN/GaN HEMT on SiC Substrate, Evidenced by Low Frequency Noise Measurements and SIMS Characterization

AIP Conference Proceedings
AstronomyPhysics
2007English

InAlN/GaN HEMT Technology for Robust HF Receivers: An Overview of the HF and LF Noise Performances

2015English

The Characteristics of Fluorinated Gate Dielectric AlGaN/GaN MIS-HEMT

IEICE Electronics Express
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2015English

Monolithic Integration of GaN HEMT With Silicon MOS Technology

English

Study on Small-Signal Modeling of GaN HEMT Devices

DEStech Transactions on Computer Science and Engineering
2018English

Simulations of Diamond Heat Spreader for the Thermal Management of GaN HEMT

2016English

Seals at Cryogenic Temperatures

SHINKU
1970English

A Planar Distributed Channel AlGaN/GaN HEMT Technology

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy