Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs From Room Temperature to 15 K

Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.119.196
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Physics, Polish Academy of Sciences

Related search

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society
AstronomyPhysics
2011English

High-Voltage AlGaN/GaN HEMTs on Si Substrate With Implant Isolation

2011English

Effect of GaN Growth Pressure on the Device Characteristics of AlGaN/ GaN HEMTs on Silicon

2009English

Effects of High-Temperature AIN Buffer on the Microstructure of AlGaN/GaN HEMTs

Semiconductors
Condensed Matter PhysicsOpticsMolecular Physics,OpticalAtomicMagnetic MaterialsElectronic
2013English

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Materials
Materials ScienceCondensed Matter Physics
2019English

Trap Behaviours Characterization of AlGaN/GaN High Electron Mobility Transistors by Room-Temperature Transient Capacitance Measurement

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2016English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

2010English

A Drain-Lag Model for AlGaN/GaN Power HEMTs

IEEE MTT-S International Microwave Symposium Digest
Electronic EngineeringRadiationElectricalCondensed Matter Physics
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy