Amanote Research
Register
Sign In
Growth and Characterization of Epitaxial Layers of Ge on Si Substrates
doi 10.1117/12.941029
Full Text
Open PDF
Abstract
Available in
full text
Date
April 22, 1987
Authors
D. Fathy
C. W. White
O. W. Holland
Publisher
SPIE
Related search
GaAs/Ge/Si Epitaxial Substrates: Development and Characteristics
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Misoriented Epitaxial Growth of (111)CoSi 2 on Offset (111)Si Substrates
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates
Materials
Materials Science
Condensed Matter Physics
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6h-SiC(0001) and Si(111) Substrates
MRS Internet Journal of Nitride Semiconductor Research
Epitaxial Growth of Multiferroic BiFeO3 Thin Films With (101) and (111) Orientations on (100) Si Substrates
Applied Physics Letters
Astronomy
Physics
Epitaxial Growth of MnSb Sputtered Films on Si Substrates-Control of Grain Orientation in MnSb Films-
Journal of the Magnetics Society of Japan
Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion
Optical Materials Express
Optical
Electronic
Magnetic Materials
Formation of Palladium Silicide Thin Layers on Si(110) Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Epitaxial Growth of Bi(111) on Si(001)
e-Journal of Surface Science and Nanotechnology
Surfaces
Mechanics of Materials
Condensed Matter Physics
Interfaces
Nanoscience
Bioengineering
Films
Biotechnology
Coatings
Nanotechnology