Nano Focus: Millimeter-Long GaN Nanowires Grow Horizontally on Sapphire Substrate

MRS Bulletin - United Kingdom
doi 10.1557/mrs.2011.244
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires

Journal of Nanomaterials
Materials ScienceNanotechnologyNanoscience
2015English

Small GaN-based Light-Emitting Diodes With a Single Electrode Pad Fabricated on a Sapphire Substrate

Semiconductor Science and Technology
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
2008English

Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates

MRS Internet Journal of Nitride Semiconductor Research
1998English

Dislocation-Free GaN Nanowires

Microscopy and Microanalysis
Instrumentation
2003English

Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate With a Novel Patterned SiO2/Al2O3 Passivation Layer

2013English

GaN Avalanche Photodiodes Grown on M-Plane Freestanding GaN Substrate

Applied Physics Letters
AstronomyPhysics
2010English

Mechanism of Horizontally Aligned Growth of Single-Wall Carbon Nanotubes on R-Plane Sapphire

English

MOCVD Growth and Optical Properties of Non-Polar (11–20) A-Plane GaN on (10–12) R-Plane Sapphire Substrate

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2010English

Graphene-Assisted Quasi-Van Der Waals Epitaxy of AlN Film for Ultraviolet Light Emitting Diodes on Nano-Patterned Sapphire Substrate

Applied Physics Letters
AstronomyPhysics
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy