A Modeling Methodology for Resistive RAM Based on Stanford-Pku Model With Extended Multilevel Capability

IEEE Transactions on Nanotechnology - United States
doi 10.1109/tnano.2019.2922838
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

High-Speed Multilevel Resistive RAM Using RTO WOX

2009English

Resistive RAM: Simulation and Modeling for Reliable Design

English

Capability Maturity Model for Collaborative Networks Based on Extended Axiomatic Design Theory

IFIP Advances in Information and Communication Technology
Computer NetworksInformation SystemsManagementCommunications
2011English

Extended Stanford University Interim Model Loss Stanford University Interim Propagation Loss Model for a Gmelina Arborea Tree-Lined Road

Review of Computer Engineering Research
2018English

A Compact HSPICE Macromodel of Resistive RAM

IEICE Electronics Express
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2007English

Multilevel Resistive Switching With Ionic and Metallic Filaments

Applied Physics Letters
AstronomyPhysics
2009English

A Conceptual Modeling Methodology Based on Niches and Granularity

Lecture Notes in Computer Science
Computer ScienceTheoretical Computer Science
2007English

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2014English

Cranking Capability Estimation Algorithm Based on Modeling and Online Update of Model Parameters for Li-Ion SLI Batteries

Energies
ControlElectronic EngineeringEnergy EngineeringRenewable EnergyEnergyFuel TechnologySustainabilityOptimizationElectricalPower Technologythe Environment
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy