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Retraction: “Functional Characteristics in Asymmetric Source/Drain InAlAsSb∕InGaAs∕InP Δ-Doped High Electron Mobility Transistor” [Appl. Phys. Lett. 86, 033505 (2005)]
Applied Physics Letters
- United States
doi 10.1063/1.2033141
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Categories
Astronomy
Physics
Date
August 19, 2005
Authors
C. S. Lee
W. C. Hsu
Publisher
AIP Publishing
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