Semiconductors: Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures (Small 40/2017)

Small - Germany
doi 10.1002/smll.201770216
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Wiley

Related search

Wafer-Scale Sulfur Vacancy-Rich Monolayer MoS2 for Massive Hydrogen Production

English

Strain Effects on the Behavior of Isolated and Paired Sulfur Vacancy Defects in Monolayer MoS2

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2017English

Steric Hindrance in Sulfur Vacancy of Monolayer MoS2 Boosts Electrochemical Reduction of Carbon Monoxide to Methane

ChemSusChem
Environmental ChemistryEnergyChemical EngineeringMaterials Science
2018English

in Situ Catalytic Growth of Large-Area Multilayered Graphene/MoS2 Heterostructures

Scientific Reports
Multidisciplinary
2014English

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

Scientific Reports
Multidisciplinary
2014English

Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer H-Bn Heterostructures

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2014English

Masthead: (Small 40/2017)

Small
Materials ScienceNanoscienceEngineeringBiomaterialsMedicineBiotechnologyNanotechnologyChemistry
2017English

Contents: (Small 40/2017)

Small
Materials ScienceNanoscienceEngineeringBiomaterialsMedicineBiotechnologyNanotechnologyChemistry
2017English

Synergetic Effect of Substitutional Dopants and Sulfur Vacancy in Modulating the Ferromagnetism of MoS2 Nanosheets

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy