Ultralow Resistance Ohmic Contacts for P-Channel InGaSb Field-Effect Transistors

IEEE Electron Device Letters - United States
doi 10.1109/led.2015.2421337
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Ultralow Resistance, Nonalloyed Ohmic Contacts to N-InGaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2009English

Low Resistance, Unannealed Ohmic Contacts to N-Type InAs0.66Sb0.34

2007English

Specific Contact Resistance Measurements of Ohmic Contacts to Semiconducting Diamond

Journal of Applied Physics
AstronomyPhysics
1995English

Hall and Field-Effect Mobilities in Few Layered P-WSe2 Field-Effect Transistors

Scientific Reports
Multidisciplinary
2015English

InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2009English

Schottky Barrier Contrasts in Single and Bi-Layer Graphene Contacts for MoS2 Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2015English

Ohmic Contacts to P-GaN Using Au/Ni-Mg-O Metallization

Journal of Electrical Engineering
Electronic EngineeringElectrical
2010English

Plasma-Assisted Oxide Removal From P-Type GaSb for Low Resistivity Ohmic Contacts

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SurfacesElectronic EngineeringCondensed Matter PhysicsInstrumentationElectronicOpticalMaterials ChemistryElectricalMagnetic MaterialsFilmsProcess ChemistryCoatingsTechnology
2015English

Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2001English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy