(PDF) Critical Thickness for the Formation of Misfit

Critical Thickness for the Formation of Misfit Dislocations Originating From Prismatic Slip in Semipolar and Nonpolar III-nitride Heterostructures

APL Materials - United States

doi 10.1063/1.4939907

Full Text

Abstract

Available in full text

Categories

Materials Science

Date

January 1, 2016

Authors

Publisher

AIP Publishing

Related search

Critical Thickness for Interface Misfit Dislocation Formation in Two-Dimensional Materials

Physical Review B

Condensed Matter Physics

Magnetic Materials

English

Erratum: Misfit Dislocations and Critical Thickness of Heteroepitaxy [J. Appl. Phys.69, 7901 (1991)]

Journal of Applied Physics

English

Theoretical Consideration of Equilibrium Dissociation Geometries of 60° Misfit Dislocations in Single Semiconductor Heterostructures

Journal of Applied Physics

English

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Physica Status Solidi (A) Applications and Materials Science

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

The Surface and Interface Nucleation of Misfit Dislocations as a Possible Source of Asymmetric Strain Relaxation in Vicinal Heterostructures

Czechoslovak Journal of Physics

English

Growth, Properties, and Device Applications of III-Nitride Nanowire Heterostructures

English

A Mechanism for the Introduction of Threading Dislocations in III-nitride Epitaxial Layers From Closed Basal Stacking Fault Domains

English

Spatial Distribution of Composition and Misfit Dislocations on the Surface of Alloys

Semiconductor Science and Technology

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Misfit Strain Relaxation by Dislocations in SrRuO3/SrTiO3 (001) Heteroepitaxy

Journal of Applied Physics

English