Amanote Research

Amanote Research

    RegisterSign In

Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si With 87% Injection Efficiency

doi 10.1021/acsphotonics.7b01387.s001
Full Text
Open PDF
Abstract

Available in full text

Date

Unknown

Authors

Unknown

Publisher

American Chemical Society (ACS)


Related search

Electrically Pumped Continuous Wave Quantum Dot Lasers Epitaxially Grown on Patterned, On-Axis (001) Si

Optics Express
OpticsAtomicMolecular Physics,
2017English

Efficiency of Four-Wave Mixing in Injection-Locked InAs/GaAs Quantum-Dot Lasers

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2016English

Effects of Modulation P Doping in InAs Quantum Dot Lasers on Silicon

Applied Physics Letters
AstronomyPhysics
2018English

Low Threading Dislocation Density GaAs Growth on On-Axis GaP/Si (001)

Journal of Applied Physics
AstronomyPhysics
2017English

Influence of Si Doping on InAs/GaAs Quantum Dot Solar Cells With AlAs Cap Layers

2017English

Dynamics of Quantum-Dot Mode-Locked Lasers With Optical Injection

IEEE Journal of Selected Topics in Quantum Electronics
ElectricalElectronic EngineeringOpticsAtomicMolecular Physics,
2011English

Narrow Spectral Linewidth in InAs/InP Quantum Dot Distributed Feedback Lasers

Applied Physics Letters
AstronomyPhysics
2018English

High-Power Passively Mode-Locked Tapered InAs/GaAs Quantum-Dot Lasers

Applied Physics B: Lasers and Optics
AstronomyPhysics
2010English

Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers

Telkomnika
Electronic EngineeringElectrical
2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy