Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible With Si Process

Advances in Condensed Matter Physics - Egypt
doi 10.1155/2019/2096854
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Hindawi Limited

Related search

Generalized Finite Element Gap Model.

1991English

Direct-Gap Optical Gain of Ge on Si at Room Temperature

Optics Letters
OpticsAtomicMolecular Physics,
2009English

Application of Novel High Order Time Domain Vector Finite Element Method to Photonic Band-Gap Waveguides

2004English

Hydrogenated Ge Nanocrystals: Band Gap Evolution With Increasing Size

Brazilian Journal of Physics
AstronomyPhysics
2006English

First-Principles Analysis of Indirect-To-Direct Band Gap Transition of Ge Under Tensile Strain

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2009English

Finite-Element Model of the Silk Electrogelation Process

Biophysical Journal
Biophysics
2012English

Solving the Stochastic Growth Model With a Finite Element Method

1993English

Finite Element Implementation of a Peridynamic Pitting Corrosion Damage Model

Ocean Engineering
Ocean EngineeringEnvironmental Engineering
2017English

Stress Analysis of the Sugar Beet Lifter With the Finite Element Method (FEM)

Agricultural Engineering
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy